產(chǎn)品概述

IGBT模塊

Summary of Features:

.High Current Density.Low V(CEsat).T(vj op) = 150°C.V (CEsat) with positive Temperature Coefficient.High Power Density.Isolated Base Plate.Standard Housing

Benefits:

.Compact Modules.Easy and most reliable assembly.No Plugs and Cables required.Ideal for Low Inductive System Designs